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器件开发工程师-2027届(J11186)

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器件开发工程师-2027届(J11186)

深圳市多一维教育文化有限公司

器件开发工程师-2027届(J11186)

2 months ago

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Important information


Contract type:

Permanent

Location:

Shanghai, China

Work mode:

Onsite

Published on:

16 August 2026

What they need


该职位来源于猎聘 职责描述: 1.根据技术路线图和产品的要求, 从事相关器件(BCD/CMOS/BJT等)开发和优化; 2.利用TCAD仿真优化设计方案,设计测试结构,组织DOE流片测试,完成技术验证和可靠性考核; 3.工作包含器件结构设计、测试图形结构设计(testkey design)、layout验证器件的关键工艺参数、确定器件关键Design Rule尺寸值、器件特性分析与窗口验证等; 4.器件性能Sensitivity的评估及验证,确保器件性能满足设计需求且可量产。 任职要求: 1.2027届应届生,硕士及以上学历,微电子、半导体或理论物理相关专业; 2.熟悉半导体器件理论知识、半导体工艺制造流程和器件版图; 3.具备独立工作、分析和解决问题的能力; 4.符合艾为价值观:简单、皮实、智慧、靠谱。

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