Epitaxy Engineer — III-V / MOCVD

Position Overview

We are seeking an Epitaxy Engineer to support the development and production of III-V semiconductor laser and detector materials. This role will focus on hands-on MOCVD epitaxial growth, process optimization, material characterization, and production support for advanced photonic devices including EML and DFB lasers.

Key Responsibilities

• Perform MOCVD epitaxial growth of III-V semiconductor materials for laser and detector applications.
• Monitor and optimize MOCVD growth recipes and process parameters.
• Support epitaxial material characterization and analysis.
• Troubleshoot MOCVD process and equipment issues.
• Improve material quality, process consistency, device performance, and yield.
• Collaborate with process, device, characterization, R&D, and production teams.
• Support MOCVD equipment maintenance and equipment reliability improvement.
• Maintain process documentation, experimental results, and quality records.

Qualifications

• 2+ years of hands-on experience with MOCVD epitaxial growth of III-V semiconductor materials.
• Master's degree in Materials Science, Electrical Engineering, Chemistry, Physics, Chemical Engineering, or related field; Bachelor's degree with strong relevant industry experience may also be considered.
• Strong understanding of III-V semiconductor materials and epitaxial growth.
• Hands-on experience operating and troubleshooting MOCVD reactors.
• Familiarity with epitaxial material characterization techniques.
• Experience with semiconductor lasers, photonics, or optoelectronic devices is highly preferred.
• Experience with InP, EML, DFB, or related laser structures is a strong plus.