Full-Time MTS DRAM Device Engineer

Role: Lead DRAM Device Engineer responsible for technical leadership in device development, characterization, and yield improvement activities for next-generation DRAM technologies.

Key Responsibilities

• Lead device engineering initiatives and serve as the primary technical contact.
• Drive device characterization, electrical data analysis, and issue segmentation to enhance yield, performance, and quality.
• Support new node introductions, technology transfers, and fab ramp activities through root-cause analysis and corrective actions.
• Provide technical direction across cross-functional teams to resolve manufacturing challenges.
• Mentor engineers and promote best practices in device analysis and data-driven problem solving.

Qualifications & Skills

• M.S. or Ph.D. in Electrical or Materials Engineering or related field.
• Experience supporting node introductions, yield ramps, and technology transfer.
• Strong knowledge of semiconductor device physics, characterization, and electrical data analysis.
• Proficiency in statistical analysis and data-driven problem solving.
• Ability to lead technical discussions and collaborate effectively across teams.

Preferred Skills

• Hands-on experience with memory technologies such as DRAM, NAND, or NOR.
• Understanding of memory architecture and margin bin analysis.
• Experience leading initiatives or mentoring engineers.
• Familiarity with AI tools and data analytics in semiconductor manufacturing.