GaN Compact Device Modeling Engineer

Job Summary

Job Title: GaN Compact Device Modeling Engineer

We are seeking a highly motivated GaN Device Engineer to lead the compact modeling of GaN devices at GFs Power product line India Site. In this role, engineer will have to support testchip planning/ GaN compact model extratcion/PDK customer interaction for all the power GaN technologies.

Responsibilities

• Analyze and represent semiconductor devices with industry standard models.
• Applies knowledge of semiconductor physics and devices to evaluate and analyze test results
• Works closely with device and other modeling engineers to interpret test results and debug device and measurement issues

Essential Responsibilities

• Device model extraction for GaN power devices.
• Definition of test structures and layout as and when necessary.
• Develop and submit characterization testplan for model extraction
• Collaborate with different team like - Global GaN team, Technology development team, characterization measurement team, design team.
• Interaction with different modeling team to resolve discrepancies in the data, model etc.

Required qualifications

• Education/Experience - M.S/PhD with focus on semiconductor devices
• Experience required - MS with 6+ years or PhD with 3-5 years of experience in power semiconductor domain.
• Knowledge of GaN semiconductor physics and application in understanding device data including Diode, Varactor, MOSFET etc.
• Knowledge of S-parameters and their application in extracting device models.
• Hands on experience with one of the industry level model extraction tools like ICCAP, MBP, BSIMPro is must.
• Strong statistical data analysis and problem-solving capability.
• Exposure to RF a plus (S-parameters etc.)
• Fluency in English Language - written verbal
• Preferred qualifications

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