STMicroelectronics

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At STMicroelectronics, we believe in the power of technology to drive innovation and make a positive impact on people, businesses, and society. As a global semiconductor company, our advanced technologies and chips form the hidden foundation of the world we live in today.
When you join ST, you will be part of a global business with more than 115 nationalities, present in 40 countries, and comprising over 50,000 diverse and dedicated creators and makers of technology around the world.
Developing technologies takes more than talent: it takes amazing people who understand collaboration and respect. People with passion and the desire to disrupt the status quo, drive innovation, and unlock their own potential.
Embark on a journey with us, where you can innovate for a future that we want to make smarter and greener, in a responsible and sustainable way. Our technology starts with you.
You will support test improvement activities related to the high‑frequency characterization of power MOSFETs and IGBTs . The objective is to set up and optimize a measurement system for intrinsic device capacitances by exploiting S‑parameters , and to conduct a systematic study versus measurement frequency .
Main Responsibilities
<ul>
<li>Contribute to the setup, calibration and optimization of a measurement bench for S‑parameter characterization of power devices (e.g. using a Vector Network Analyzer).</li>
<li>Measure S‑parameters of power MOSFETs/IGBTs and extract intrinsic capacitances (e.g. input, output, reverse transfer capacitances), taking into account package and fixture effects.</li>
<li>Investigate the frequency dependence of the extracted capacitances and evaluate the validity limits of low‑frequency vs high‑frequency models.</li>
<li>Analyze the impact of measurement conditions (biasing, fixture, de‑embedding, calibration) on the accuracy and repeatability of the extracted parameters.</li>
<li>Apply basic statistical analysis to assess measurement dispersion and uncertainty.</li>
<li>Compare measurement results with device models and datasheet specifications , highlighting discrepancies and proposing improvements in the measurement or extraction methodology.</li>
<li>Prepare technical documentation , including test procedures, data analysis reports and presentations.</li>
</ul>
Required Skills
<ul>
<li>Good knowledge of basic electronics and circuit analysis , including small‑signal equivalent circuits .</li>
<li>Familiarity with AC and high‑frequency measurements ; basic knowledge of S‑parameters and their use in circuit modeling is a plus.</li>
<li>Practical attitude towards laboratory measurements , including use of oscilloscopes, function generators, network analyzers or similar RF instruments (knowledge can also be acquired during the internship, but strong motivation is required).</li>
<li>Ability to process measurement data and perform basic statistical analysis using tools such as Excel, MATLAB, or Python.</li>
<li>Interest in power electronics and semiconductor device characterization .</li>
<li>Good written and spoken English .</li>
</ul>
ST is proud to be one of the 17 companies certified as a 2025 Global Top Employer and the first and only semiconductor company to achieve this distinction. ST was recognized in this ranking thanks to its continuous improvement approach and stands out particularly in the areas of ethics &amp; integrity, purpose &amp; values, organization &amp; change, business strategy, and performance.
At ST, we endeavor to foster a diverse and inclusive workplace, and we do not tolerate discrimination. We aim to recruit and retain a diverse workforce that reflects the societies around us. We strive for equity in career development, career opportunities, and equal remuneration. We encourage candidates who may not meet every single requirement to apply, as we appreciate diverse perspectives and provide opportunities for growth and learning. Diversity, equity, and inclusion (DEI) is woven into our company culture.
To discover more, visit st.com/careers.

Internship - Intrinsic Capacitance Measurement of Power MOSFETs/IGBTs Using S‑Parameters

Internship - Intrinsic Capacitance Measurement of Power MOSFETs/IGBTs Using S‑Parameters

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