Power GaN Technology device engineer

OUR STORY At STMicroelectronics, we believe in the power of technology to drive innovation and make a positive impact on people, businesses, and society. As a global semiconductor company, our advanced technologies and chips form the hidden foundation of the world we live in today. When you join ST, you will be part of a global business with more than 115 nationalities, present in 40 countries, and comprising over 50,000 diverse and dedicated creators and makers of technology around the world. Developing technologies takes more than talent: it takes amazing people who understand collaboration and respect. People with passion and the desire to disrupt the status quo, drive innovation, and unlock their own potential. Embark on a journey with us, where you can innovate for a future that we want to make smarter and greener, in a responsible and sustainable way. Our technology starts with you. YOUR ROLE You will focus on data analysis, parametric testing, wafer-level characterization, and device physics understanding of GaN power technology platforms, including TEGs (Test Element Groups). By transforming measurement results into clear, actionable insights and linking electrical behavior to device design, process integration, and physical mechanisms, you will support technology development, performance optimization, reliability assessment, and process improvement.

You will work closely within R&D organization and Manufacturing teams to plan and execute characterization activities, analyze data, identify trends and root causes, and communicate findings to support informed technical decisions and technology roadmap development.

Key Responsibilities

• Perform data analysis and statistical evaluation of parametric test, TEG, and wafer-level characterization results.
• Support the planning and execution of electrical characterization and parametric testing activities for GaN power technologies.
• Analyze measurement data to identify trends, variability, anomalies, failure mechanisms, and opportunities for process and device performance improvement.
• Correlate electrical results with device architecture, process integration, and physical mechanisms governing GaN device operation.
• Investigate key device parameters such as threshold voltage, dynamic RDS(on), leakage currents, breakdown voltage, current collapse, trapping effects, and switching-related figures of merit.
• Support technology development by providing insights into device performance, variability, robustness, and reliability through characterization data analysis.
• Collaborate with R&D and Manufacturing teams to identify root causes and drive corrective actions.
• Prepare clear technical reports and communicate findings to stakeholders across R&D and Operations.
• Apply statistical methods and data visualization techniques using JMP, Excel, Python, and other data analysis tools.
• Contribute to the definition and optimization of characterization methodologies, test structures, and monitoring strategies for GaN technologies.

Your Skills & Experiences

• Strong knowledge of data analysis, statistical methods, and experimental data interpretation.
• Experience with semiconductor electrical characterization and parametric testing.
• Understanding of Power GaN device physics, including HEMT operation principles, polarization effects, 2DEG formation, trapping phenomena, current collapse, dynamic RDS(on), breakdown mechanisms, and leakage behavior.
• Ability to correlate electrical performance with device design, process integration, and material characteristics.
• Knowledge of semiconductor fabrication processes and process integration schemes.
• Familiarity with reliability and robustness aspects of power semiconductor devices.
• Good data manipulation and visualization skills.
• Experience with JMP, Excel, and basic-to-intermediate Python for data analysis.
• Ability to interpret parametric test, TEG, wafer-level characterization, and reliability data.
• Strong problem-solving skills with a root-cause analysis mindset.
• Effective communication and collaboration skills in a cross-functional R&D and manufacturing environment.
• Business proficiency in English.

The expected salary range for this position is €38,000 – €45,000 gross annual salary (RAL), plus variable pay relevant for the role. In accordance with the EU Pay Transparency Directive and applicable Italian legislation, this compensation range has been determined based on objective, gender-neutral criteria, including job responsibilities, required skills, relevant experience, qualifications, and market benchmarks. Placement within the range will depend on the candidate’s profile and demonstrated competencies. The final offer will be made in compliance with the applicable National Collective Bargaining Agreement (CCNL), where relevant, and our internal compensation policies. We are committed to equal pay for equal work and equal opportunities for all candidates. ST is proud to be one of the 17 companies certified as a 2025 Global Top Employer and the first and only semiconductor company to achieve this distinction. ST was recognized in this ranking thanks to its continuous improvement approach and stands out particularly in the areas of ethics & integrity, purpose & values, organization & change, business strategy, and performance.

At ST, we endeavor to foster a diverse and inclusive workplace, and we do not tolerate discrimination. We aim to recruit and retain a diverse workforce that reflects the societies around us. We strive for equity in career development, career opportunities, and equal remuneration. We encourage candidates who may not meet every single requirement to apply, as we appreciate diverse perspectives and provide opportunities for growth and learning. Diversity, equity, and inclusion (DEI) is woven into our company culture.

To discover more, visit st.com/careers.