Principal Engineer / Lead Engineer, Etch

ABOUT MRDI

Hong Kong Microelectronics Research and Development Institute (MRDI) is established to seize the huge potential market for third-generation semiconductors and align with the national strategy for technological development.

The vision is for the MRDI to play a leading role in strengthening collaboration with the industry, academia, and research sectors, expediting the "1 to N" transformation of scientific research outcomes, promoting technological innovation, and assisting the industry in enhancing efficiency as well as achieving upgrading and transformation.

ABOUT THE ROLE

The MRDI is seeking motivated Principal Engineer / Lead Engineer, Etch to support and lead the R&D of GaN and Ga2O3 devices in MRDI, Hong Kong. The successful candidate will lead the development, optimization, and sustainment of advanced etch processes for GaN HEMTs, micro-LEDs, and Ga2O3 devices, to develop advanced power devices from concept to demonstration.

JOB RESPONSIBILITIES

• Lead the development and optimization of low-damage etch processes for GaN and Ga2O3 devices, including p-GaN etch, gate recess, ohmic contact recess, trench etch, surface treatment, and other critical mesa or etch steps, to improve device performance, stability, and reliability.
• Work closely with the etch module in the MRDI Fab, using dry etch tools and characterization tools; drive process development, process window definition, and troubleshooting.
• Design and execute DOE and split-lot experiments to study plasma chemistry, ion energy, mask selectivity, sidewall profile, etch rate, surface damage, and their impact on GaN and Ga2O3 device characteristics.
• Work closely with device, process integration, and test teams to understand etch-related issues such as isolation leakage, current collapse, dynamic Ron, contact resistance, breakdown, and threshold instability in GaN devices.
• Develop and maintain process specifications, SOPs, control plans, SPC charts, and failure-analysis reports.
• Review technical work and promote best practices; mentor junior engineers, technicians, and students; and support technology transfer.
• Generate IP, patents, publications, and technical documentation.
• Follow safety, quality, and IP compliance requirements.
• Perform other tasks assigned by the team leader.

REQUIREMNETS

• Ph.D. or M.S. in Electrical Engineering, Materials Science, Applied Physics, Chemical Engineering, Microelectronics, or a related discipline. A strong educational background from leading universities or research institutes is preferred. (Principal: 8+ years of relevant experience in semiconductor etch process development, preferably in GaN, SiC, or other compound semiconductors; Lead: 5+ years of relevant experience in semiconductor etch process development.)

• Hands-on experience in a semiconductor fab environment, with direct ownership of etch tools.

• Strong knowledge of ICP-RIE, RIE, ICP, DRIE, IBE, and other dry etch tools.

• Solid understanding of plasma physics, etch chemistry, sidewall passivation, selectivity, and low-damage etch processes.

• Solid understanding of material and interface characterization techniques such as XPS, SIMS, TEM, SEM, AFM, ellipsometry, CV, and IV.

• Experience with DOE, SPC, data analysis, and process troubleshooting.

• Proficiency in data analysis tools such as Python, MATLAB, JMP, or Minitab.

• Strong leadership, collaboration, and communication skills.

• Fluency in Mandarin Chinese or English.

• We value both talent and experience. Preferred qualifications include:

  • Direct experience with GaN HEMT etch, mesa isolation, gate recess, low-damage etch, and reliability improvement.
  • Experience with Ga2O3 etching and surface treatment.
  • Experience with 6-inch or 8-inch GaN platforms.
  • Track record of patents, publications, or successful technology/product releases.
  • A straightforward, direct, and efficient working style.

Note: The actual rank and position offered will be commensurate with the applicant's qualifications and experience*.*

The initial employment contract spans 12 months and can be renewed with a longer tenure upon mutual agreement of the incumbent and MRDI. The incumbent will normally work five days a week. Salary will be commensurate with qualifications and experience. A gratuity of 15% of the salary will be awarded upon satisfactory completion of the contract.

APPLICATION PROCEDURE

To apply, please submit the applications via JobsDB by 22 October 2026. Please specify the present/ latest salary and expected salary in the CV. Only shortlisted candidates will be notified of the result of the application. MRDI reserves the right not to fill the position.

Information provided by applicants will be kept confidential and used for recruitment and other employment-related purposes only. MRDI will retain the personal data of unsuccessful applications for future recruitment purposes for a period of not more than 6 months.

MRDI is an Equal Opportunities Employer and welcomes applications from all qualified candidates.