Principal Process Engineer

The ideal candidate shall be able to perform the following:

• Drive the technical strategy and process architecture for novel Atomic Layer Etching (ALE) isotropic/anisotropic surface modification, and surface passivation chemistries targeting GAA nanosheet release, high-aspect-ratio (HAR) contact etch, and nanoscale selectivity.

• Lead fundamental studies in plasma-surface interactions, surface chemistry kinetics, radical/ion flux tuning, and atomic self-limiting mechanisms.

• Partner cross-functionally with software and AI control teams to integrate recipe optimization, real-time end-point detection, and predictive process drift control.

• Collaborate with mechanical, electrical, RF/plasma, and software control engineers to specify chamber geometry, gas distribution, RF plasma source coupling, and thermal management for next-generation tools.

• Lead process qualification of prototype tools from early cleanroom alpha/beta to customer demonstration and pilot-line release.

• Translate customer device roadmaps and yield challenges into concrete process specifications, benchmark demos, and technical proposals.

• Identify breakthrough surface reaction concepts and novel chamber designs; lead patent disclosures to secure AAT's intellectual property leadership.

• Mentor, coach, and guide staff/senior process engineers, scientists, and lab technicians, cultivating an environment of technical rigor and rapid execution.

Job Qualifications:

• Ph.D. or Master’s degree in Materials Science, Chemical Engineering, Chemistry, Physics, or a related engineering discipline.

• 8+ years (for Ph.D.) or 12+ years (for Master's) of hands-on semiconductor process R&D experience in advanced etch (plasma etch, reactive ion etch, atomic layer etch).

• Proven track record of taking novel semiconductor process formulations from R&D concept to high-volume manufacturing (HVM) or successful customer pilot lines.

• Deep expertise in plasma etch physics and chemistry, self-limiting atomic layer reactions, surface characterization, and plasma diagnostics (OES, mass spectrometry, Langmuir probes).

• Mastery of Design of Experiments (DOE), Statistical Process Control (SPC), statistical analysis tools (JMP, Minitab, MATLAB), and physical-chemical modeling of etch kinetics.

• Highly competent in surface analysis and material characterization techniques (e.g., SEM, TEM, XPS, AFM, ellipsometry, SIMS, profilometry).