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Research Scientist (RP2)

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Onsite

Research Scientist (RP2)

The Hong Kong University of Science and Technology

Research Scientist (RP2)

Skills

R

3 months ago

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Important information


Contract type:

Permanent

Work mode:

Onsite

Published on:

10 August 2026

What they need


Company Name:
Power Semiconductors and Applications Center (PowerSAC)

Job Title: Research Scientist (RP2)

Ref. No.: PowerSAC0008

The Power Semiconductors and Applications Center (PowerSAC), established under the SEAM@InnoHK initiative, is seeking a Research Scientist to contribute to and help lead the scientific and technical development of the high-speed, low-voltage GaN power device technologies.

Reporting to the Programme Lead, the appointee will contribute to the design, fabrication, characterization, reliability evaluation, and application-oriented development of low-voltage GaN power devices, with emphasis on low specific on-resistance, high switching speed, gate reliability, E-field management, and dynamic performance.

Key Responsibilities

  • Conduct R&D on low-voltage GaN HEMTs, focusing on device scaling, low specific on-resistance, high-frequency switching, and reliability improvement.
  • Perform device simulation, process development, electrical characterization, switching evaluation, and reliability testing for low-voltage GaN power devices.
  • Prepare technical reports, publications, patent disclosures, project deliverables, and milestone documentation.
  • Work closely with academic collaborators, industry partners, engineers, and external fabrication/testing facilities to deliver programme milestones.

Requirements

  • PhD in Electrical/Electronic Engineering, Power Electronics, Semiconductor Devices, or a closely related discipline.
  • Strong background in GaN power devices, preferably low-voltage GaN HEMTs.
  • Hands-on experience in device characterization, switching transient analysis, dynamic performance evaluation, or reliability testing.
  • Proven research output through high-quality publications, patents, conference papers, or technology-development achievements in power semiconductor devices.
  • Ability to work across device physics, circuit-level switching behaviour, and application-oriented power conversion requirements.
  • Strong analytical, communication, presentation, and teamwork skills; good command of written and spoken English, with Chinese proficiency advantageous.

Remuneration and Conditions of Service

Salary is highly competitive and will be commensurate with qualifications and experience. Fringe benefits including annual leave, medical and dental benefits will be provided.

Application Procedure

To apply, please send your application with a full curriculum vitae indicating the current and expected salaries to [email protected].

Review of applications will begin shortly and continue until the position is filled. We thank applicants for their interest but advise that only shortlisted candidates will be notified.

(Information provided by applicants will be used for recruitment and other employment-related purposes.)

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