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RF Switch and Tuner Technical Expert, MTS

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Onsite

RF Switch and Tuner Technical Expert, MTS

Michael Page

RF Switch and Tuner Technical Expert, MTS

16 days ago

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Important information


Contract type:

Permanent

Location:

Shanghai, China

Work mode:

Onsite

Published on:

7 October 2026

What they need


  • Development of high-performance RF front-end ICs
  • Address critical challenges in RF performance, IEC robustness, manufacturing

About Our Client Our client is a fabless semiconductor company. The company develops RF front-end ICs for mobile devices, communications infrastructure and related applications.

Job Description

  • Lead the development of RF switches, tuners, low-noise amplifiers, digitally controlled phase shifters or digital step attenuators, with in-depth ownership of at least one product category.
  • Develop technical solutions and IC designs for wideband RF switches operating from 9 kHz to 30 GHz, addressing insertion loss, isolation, power handling, Coff and switching speed requirements.
  • Define product architecture, technical roadmaps and design solutions based on customer requirements, target applications and business plans.
  • Analyse and resolve complex RF device issues involving insertion loss, isolation, linearity, power compression, Ron, Coff, power handling, hot switching and IEC robustness.
  • Develop RF switch products for communications infrastructure applications, including designs targeting average power levels of 43 dBm and power levels above 52 dBm.
  • Collaborate with foundry partners to optimise device structures and process parameters according to product performance, reliability and manufacturability requirements.
  • Analyse wafer acceptance test data and related process information to identify relationships between device performance, abnormal results and process variations.
  • Improve manufacturing consistency and yield through the joint optimisation of circuit design, device structure and fabrication processes.
  • Participate in technical design reviews and provide guidance on IC architecture, device design, layout implementation and product iteration.
  • Support engineering teams in resolving complex technical issues, identifying design risks and implementing practical corrective actions.
  • Guide test engineering teams in defining RF test specifications, validation methodologies and characterisation plans.
  • Support tape-out, engineering validation, qualification, customer certification and mass-production introduction.
  • Work with application engineering, quality and customer-facing teams to investigate product issues and deliver technical solutions.
  • Monitor developments in RF front-end devices, semiconductor processes and target applications, providing input for product planning and technology evaluation.
  • Provide technical coaching and knowledge transfer to strengthen the RF design and engineering capabilities of the wider team.

The Successful Applicant

  • Master's degree or above in Microelectronics, RF and Microwave Engineering, Communications Engineering, Electronic Engineering, Semiconductor Engineering or a related discipline.

  • At least six years of experience in RF IC design, device development or related product engineering.

  • In-depth development experience in at least one of the following areas:

  • RF switches

  • Base-station or communications-infrastructure switches

  • Antenna tuners

  • Low-noise amplifiers

  • Digitally controlled phase shifters

  • Digital step attenuators

  • Proven experience taking relevant products through tape-out, engineering validation, qualification and mass-production introduction.

  • Strong understanding of RF device performance parameters, including insertion loss, isolation, P0.1dB, IP3, Ron, Coff, power handling and switching speed.

  • Practical experience in IEC robustness design and in improving IEC performance through circuit, device or process optimisation.

  • Ability to interpret wafer acceptance test data and relevant process parameters, and to use the findings for root-cause analysis and performance improvement.

  • Experience collaborating with foundries on device and process optimisation to improve RF performance, manufacturing consistency and yield.

  • Familiarity with one or more semiconductor technologies, including SOI, GaAs, SiGe and pHEMT.

  • Experience with wideband RF switches operating from 9 kHz to 30 GHz is preferred.

  • Experience with high-power switches for communications infrastructure or high-performance LNA products is preferred.

  • Experience in high-power switch design and hot-switching design is preferred.

  • Previous experience within a fabless semiconductor company, communications equipment company or relevant research organisation is preferred.

  • Strong analytical and problem-solving capability, with the ability to resolve technical issues across design, process, testing and customer application environments.

  • Effective communication and cross-functional collaboration skills.

What's on Offer

  • A fixed salary and performance-based bonus aligned with the candidate's experience and responsibilities.
  • The opportunity to contribute to RF front-end product planning and core IC development.
  • Exposure to the complete product-development lifecycle, including definition, design, tape-out, validation, qualification and mass production.
  • Cross-functional collaboration with IC design, foundry, test engineering, application engineering, quality and customer-facing teams.
  • Opportunities to expand technical expertise across RF switches, tuners, LNAs, phase shifters and attenuators.
  • Long-term incentives, employee benefits and professional-development support in accordance with company policy.

Quote job ref: JN-092026-7112884

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