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RFSOI Technology Development Integration Staff Engineer

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Onsite

RFSOI Technology Development Integration Staff Engineer

United Microelectronics Corporation (UMC)

RFSOI Technology Development Integration Staff Engineer

Skills

NodeR

22 days ago

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Important information


Contract type:

Permanent

Location:

Singapore

Work mode:

Onsite

Published on:

2 October 2026

What they need


Job Summary

We are seeking a highly experienced Staff Technology Development Integration Engineer to lead the development and integration of advanced RF-SOI (Radio Frequency Silicon-On-Insulator) semiconductor technologies. This role will drive process integration across modules, enabling high-performance RF devices for applications such as 5G/6G, IoT, and automotive connectivity.

Key Responsibilities

  • Lead end-to-end process integration for RF-SOI technology development, from early concept through qualification and production transfer.
  • Define and optimize integration schemes involving FEOL, MOL, and BEOL modules for RF device performance (e.g., switches, LNAs, tuners).
  • Collaborate closely with device engineering, process module teams (lithography, etch, deposition, implant), and design teams to meet RF performance targets (linearity, insertion loss, isolation).
  • Drive yield improvement and defect reduction through systematic failure analysis and data-driven methodologies.
  • Develop and execute DOE (Design of Experiments) to understand process interactions and optimize device characteristics.
  • Own integration-related technical problem solving, including variability, reliability, and parametric issues.
  • Support silicon debug, electrical characterization, and correlation between process parameters and RF performance.
  • Lead cross-functional integration reviews and provide technical direction to junior engineers.
  • Interface with foundry/manufacturing partners for technology transfer and ramp-up.
  • Document and present technical findings to internal stakeholders and leadership.

Required Qualifications

  • PhD or Master’s degree in Electrical Engineering, Materials Science, Physics, or related field.
  • 8+ years of semiconductor process integration experience, with strong exposure to RF technologies.
  • Deep understanding of RF-SOI device physics and integration challenges is preferred.
  • Experience with CMOS or SOI process technologies, including integration flows and module interactions.
  • Strong analytical skills with hands-on experience in DOE, statistical analysis, and yield learning.
  • Proven track record of solving complex integration problems in advanced nodes.
  • Familiarity with RF device characterization and key metrics (harmonics, linearity, R_on, C_off, etc.).
  • Excellent communication and leadership skills.

Key Competencies

  • Technical leadership and ownership
  • Cross-functional collaboration
  • Data-driven decision making
  • Problem-solving under ambiguity
  • Innovation in semiconductor technology development

Impact of the Role

This role is critical in enabling next-generation RF technologies that power modern wireless communication systems. You will directly influence device performance, manufacturability, and time-to-market for cutting-edge semiconductor solutions.

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