Silicon Carbide (SiC) MOSFET Characterization Engineer

Taipei Mosfets, TW, Taiwan | Taipei, TW, Taiwan | Research & Development

Job Description

How You'll Help Us Build the DNA of Tech:

We are seeking a Silicon Carbide (SiC) MOSFET Characterization Engineer to support the electrical characterization, performance evaluation, qualification, and production release of SiC power MOSFET products.

This position location is Taipei Taiwan

Responsibilities:

• Develop and execute comprehensive SiC MOSFET characterization plans from engineering samples through qualification and production release.
• Perform DC, A.C and thermal characterization including ruggedness characterization UIS/avalanche, SOA, short-circuit capability, Qrr, trr, and peak reverse-recovery current and other applicable stress conditions
• Perform dynamic switching characterization using double-pulse and application-relevant testing, including Eon/Eoff, switching times, dv/dt, di/dt, and ringing.
• Evaluate performance versus temperature, bus voltage, drain current, gate-drive voltage, external gate resistance, and switching conditions.
• Investigate abnormal electrical behavior and correlate results with device, wafer process, assembly/package, and test variables.
• Develop good-versus-bad characterization methods and identify electrical signatures suitable for production screening where applicable.
• Support bench-to-ATE correlation, datasheet limit development, product specifications, guard bands, and production test limits.
• Prepare characterization reports and clearly communicate technical conclusions to cross-functional teams

Knowledge and Experience You'll Need:

• BS or MS in Electrical Engineering, Electronic Engineering, Semiconductor Engineering, Physics, or a related discipline.
• Typically, 5+ years of experience in power semiconductor characterization, product engineering, device engineering, or applications engineering.
• Direct experience with SiC MOSFETs strongly preferred; experience with 650 V to 1700 V+ power devices is highly desirable.
• Strong laboratory, problem-solving, statistical-analysis, and technical communication skills.
• Strong understanding of SiC MOSFET device physics, switching behavior, gate oxide behavior, capacitances, body-diode recovery, avalanche, SOA, and temperature dependence.
• Hands-on experience with high voltage products using power-device analyzers such as Keysight B1505A/B1506A/PID1500 or equivalent, curve tracers, double-pulse systems, oscilloscopes, high-voltage probes, current probes, and LCR/impedance analyzers.
• Knowledge of high-voltage measurement techniques, fixture creepage and clearance design, Kelvin connections, grounding, parasitic inductance, fixture design, and measurement correlation.
• Experience analyzing characterization data using Python, JMP, Spotfire, MATLAB, or equivalent tools.
• Must have good Test hardware skills in developing and debugging test boards and respective circuitry.
• Preferred experience: Automotive-grade SiC MOSFET development and AEC-Q101 qualification.
• Preferred experience: New product introduction from engineering characterization through qualification and high-volume manufacturing.
• Preferred Experience: Wafer-level and final-test correlation, production ATE screening, and manufacturing data analysis.
• Preferred Experience: SiC reliability testing including HTRB, HTGB, TDDB, threshold-voltage stability, and high-temperature operation.

Vishay offers a comprehensive suite of benefit programs and other resources designed to help you achieve your personal and professional goals. With us, you'll experience unique career paths, an open and collaborative culture, a stable business that will be there for you, and opportunities to work globally and locally. Do you have the skills we need? Are you ready to power your career as you power the world? .