Staff Device Engineer

Description Responsibilities

• Design and qualify high-voltage GaN power devices integrated in high performance and high reliability products (including automotive).
• Perform device/process simulations and device layout for GaN power devices.
• Assignments will include power device creation, fabrication and full characterization, and issuing technical reports.
• Evaluate electrical / thermal performance and reliability of GaN power devices.
• Prior experience in Si power device development is a plus.
• Interact with other departments for best use of Company’s technologies and to support key customer requirements.

Requirements

• B. Sc degree in Electrical Engineering with 8 years’ working experience or
• M. Sc degree in Electrical Engineering with 6 years’ working experience or
• Ph. D degree in Electrical Engineering with 3 years’ working experience
• Proven track record of independently designing and taking into volume production of high-voltage GaN power devices
• Sound understanding of semiconductor device physics, especially WBG
• Proficient in TCAD simulation and CADENCE layout tools
• Hands-on experience with high-voltage testing and data acquisition systems
• Strong communication and collaboration skills