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薄膜工艺研发工程师-TD Thin Film Process Engineer

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Onsite

薄膜工艺研发工程师-TD Thin Film Process Engineer

ChangXin Memory Technologies, Inc.

薄膜工艺研发工程师-TD Thin Film Process Engineer

Skills

Node

5 days ago

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Important information


Contract type:

Permanent

Salary:

CN¥20,000 – CN¥60,000 / month

Location:

Hefei, Anhui, China

Work mode:

Onsite

Published on:

19 October 2026

What they need


岗位职责

**1. 与不同团队协作,开发业界领先的半导体器件**

Work with different teams to develop new best in class semiconductor devices;

**2. 规划并有效执行实验,撰写清晰、详细的报告**

Plan and execute effective experiments, write clear and detailed reports;

**3. 从海量数据(包括材料、缺陷与电性数据)中做出有洞察力的推断**

Make insightful inferences from substantial data, including material, defect and electrical data;

**4. 支持根因查找与独特的失效模式分析**

Support root cause finding and unique failure mode analysis;

**5. 在多个工艺、设备或技术领域保持或发展专业能力**

Maintain or develop expertise in multiple process, hardware, or technology areas;

**6. 与制造晶圆厂协作,推动新技术的成功转移(转移导入量产)**

Cooperating with manufacturing fab to facilitate the successful transfer of new technology.

岗位要求

**1. 物理、光学、电气工程、化学工程、材料科学、数学等相关专业硕士学位**

Master degree in Physical Sciences, Optics, Electrical Engineering, Chemical Engineering, Materials Science, Mathematics etc;

**2. 具备低方阻(Low Rs)金属材料研究与工艺开发经验**

Lower Rs Metal material study and process development experience;

**3. 至少5年半导体行业工作经验**

At least 5 years semiconductor working experience;

**4. 有先进CMOS开发经验者优先,如HKMG(高k金属栅);有先进DRAM工艺(1a节点及以后)量产或技术开发经验者优先;具备DRAM/CMOS相关电学与可靠性特性的工作知识**

Experience in advanced CMOS development, like HKMG is preferred; Experience in advanced DRAM process (beyond 1a node) mass production or technology development is preferred; Working Knowledge of DRAM/CMOS related electrical/reliability properties;

**5. 良好的沟通与团队协作经验**

Good communication and teamwork experience;

**6. 擅长解决复杂问题,包括有带领跨职能专项小组的经验**

Good at solving complex problems including experience leading cross-functional taskforces;

**7. 流利的英语口语与写作能力**

Fluent English speaking & writing skills.

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